Advances in Scanning Probe Microscopy

About this book

This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

Contents

Theory of Scanning Probe Microscopy * First-Principles Electronic Structure Theory for Semiconductor Surfaces * Atomic Structure of 6H-SiC * Application of Atom Manipulation for Fabricating Nanoscale and Atomic-scale Structures on Si Surfaces * Theoretical Insights into Fullerenes Absorbed on Surfaces: Comparison with STM Studies * Apparent Barrier Height and Barrier-Height Imaging of Surfaces * Mesoscopic Work Function Measurement by Scanning Tunneling Microscope * Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces * Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Microscopy.

Customer Reviews